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STTA6006P STTA12006TV1/2
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFICTO "FREEWHEEL MODE"OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : ISOTOP Electrical insulation : 2500VRMS Capacitance < 45 pF DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "freewheel mode" operations and is particularly suitable and efficient in motor ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj T stg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current SOD93 ISOTOP tp=5s F=5kHz square Surge non repetitive forward current tp=10 ms sinusoidal Maximum operating junction temperature Storage temperature range Value 600 600 80 150 450 500 150 -65 to 150 Unit V V A A A A C C control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in ISOTOP or SOD93 these 600V devices are particularly intended for use on 240V domestic mains.
K
60A / 2 x 60A 600V 45ns 1.5V
K2
A2
A2
K1
K1
A1
K2
A1
STTA12006TV1
STTA12006TV2
A K
ISOTOPTM
SOD93 STTA6006P
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4C
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STTA12006TV1/2 / STTA6006P
THERMAL AND POWER DATA (Per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Test conditions Per diode Total Coupling P1 Pmax Conduction power dissipation IF(AV) = 60A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 ISOTOP SOD93 ISOTOP Tc= 64C Tc= 58C Tc= 54C Tc= 48C 120 W Value 0.85 0.47 0.1 108 W Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR
*
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
Test conditions IF =60A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.25 5
Max 1.75 1.5 200 12 1.14 6
Unit V V A mA V m
**
Vto rd
Test pulses :
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 400V dIF/dt = -480 A/s dIF/dt = -500 A/s Tj = 125C VR = 400V dIF/dt = -500 A/s IF =60A 38 24 IF =60A 0.37 / Min Typ 45 80 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25C IF =60 A, dIF/dt = 480 A/s measured at, 1.1 x VFmax Min Typ Max 700 V 14 Unit ns
VFp
Peak forward voltage Tj = 25C IF =60A, dIF/dt = 480 A/s
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STTA12006TV1/2 / STTA6006P
Fig. 1: Conduction losses versus average current.
P1(W) 120 100 80 60 40 20 0 0 IF(av)(A) 5 10 15 20 25 30 35 40 45 50 55 60
=0.5
Fig. 2: Forward voltage drop versus forward current.
VFM(V) 3.50
T
= 0 .1
=0.2
MAXIMUM VALUES
3.00
= tp/T tp
=1
2.50
Tj=125 oC
2.00 1.50 1.00 0.50
IFM(A)
0.00 1
10
100
1000
Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt.
IRM(A) 55 o 50 90% CONFIDENCE Tj=125 C 45 VR=400V IF=120A 40 35 30 I F= 60A 25 20 I F= 30A 15 10 5 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000
Fig. 5: Reverse recovery time versus dIF/dt.
trr(ns) 350 90% CONFIDENCE Tj=125oC 325 VR=400V 300 275 250 225 IF=120A 200 I F=60A 175 150 I F=30A 125 100 75 dIF/dt(A/ s) 50 0 100 200 300 400 500 600 700 800 900 1000
Fig. 6: Softness factor (tb/ta) versus dIF/dt.
S factor 0.80 Typical values Tj=125 oC 0.75 IF<2xI F( av) 0.70 0.65 VR=400V 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 dIF/dt(A/ s) 0.20 0 100 200 300 400 500 600 700 800 900 1000
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STTA12006TV1/2 / STTA6006P
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C).
4.0 3.8 3.5 3.3 3.0 2.8 2.5 2.3 2.0 1.8 1.5 1.3 1.0 0.8 0.5 0
Fig. 8: Transient peak forward voltage versus dIF/dt.
VFP(V) 25.0 o 22.5 90% CONFIDENCE Tj=125 C 20.0 IF =IF (av) 17.5 15.0 12.5 10.0 7.5 5.0 2.5 dIF/dt( A/ s) 0.0 0 200 400 600 800
S factor
IRM
Tj(oC) 25 50 75 100 125 150
1000
1200
Fig. 9: Forward recovery time versus dIF/dt.
tfr(ns) 1000 90% CONFIDENCE Tj=125 oC 900 VFr=1.1*VF max. 800 IF=IF (av) 700 600 500 400 300 200 100 dIF/dt(A/ s) 0 0 200 400 600 800 1000 1200
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STTA12006TV1/2 / STTA6006P
APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any "FREEWHEEL Mode" application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below:
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
t T F = 1/T = t/T
LOAD
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STTA12006TV1/2 / STTA6006P
APPLICATION DATA (Cont'd) Fig. B: STATIC CHARACTERISTICS Conduction losses :
I
P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
IF Rd VR V IR V tO VF
Reverse losses : P2 = VR . IR . (1 - )
Fig. C: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x ( 3 + 2 x S ) x F 6 x dIF dt VR x IRM x IL x ( S + 2 ) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dIR /dt VR trr = ta + tb S = tb / ta DIODE
Turn-off losses (in the diode) : P3 =
VR x IRM 2 x S x F 6 x dIF dt
P3 and P5 are suitable for power MOSFET and IGBT
Fig. D: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
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STTA12006TV1/2 / STTA6006P
PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O 3.95 31.00 4.00 4.10 0.157 0.50 1.10 1.75 10.80 14.70 11.10 0.425 15.20 0.578 12.20 16.20 18.0 4.15 0.156 1.220 0.161 0.709 0.163 Millimeters 4.70 1.17 2.50 1.27 0.78 0.020 1.30 0.043 0.069 0.437 0.598 0.480 0.638 Inches 0.193 0.054 0.098 0.050 0.031 0.051 Min. Typ. Max. Min. Typ. Max. 4.90 0.185 1.37 0.046
Cooling method : by conduction (C) Recommended torque value : 0.8 m.N Maximum torque value : 1m.N
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STTA12006TV1/2 / STTA6006P
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Cooling method : by conduction (C) Millimeters Min. Max. 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 Inches Min. Max. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951
24.80 typ. 14.90 15.10 12.60 3.50 4.10 4.60 4.00 4.00 30.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30
0.976 typ. 0.587 0.594 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.504 0.169 0.169 0.197 0.69 0.173 1.193
Ordering type STTA6006P
Marking STTA6006P
Package SOD93 ISOTOP ISOTOP
Weight 3.79g 27g without screws
Base qty 30 10 10
Delivery mode Tube Tube Tube
STTA12006TV1 STTA12006TV1 STTA12006TV2 STTA12006TV2 Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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